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STB20NM50FD STF20NM50FD - STP20NM50FD
N-channel 500 V, 0.22 20 A D2PAK, TO-220FP, TO-220 , FDmeshTM Power MOSFET (with fast diode)
Features
Type VDSS RDS(on) RDS(on)* Qg max ID 20 A 20 A 20 A
STB20NM50FD 500 V < 0.25 8.36 * nC STF20NM50FD 500 V < 0.25 8.36 * nC STP20NM50FD 500 V < 0.25 8.36 * nC

3 1 2
1
3 2
High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields
TO-220FP
1
3
TO-220
DPAK
Figure 1.
Internal schematic diagram
Application
Switching applications
Description
The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
Table 1.
Device summary
Marking B20NM50FD F20NM50FD P20NM50FD Package DPAK TO-220FP TO-220 Packaging Tape and reel Tube Tube
Order codes STB20NM50FD STF20NM50FD STP20NM50FD
April 2008
Rev 9
1/16/
www.st.com 16
Contents
STB20NM50FD - STF20NM50FD - STP20NM50FD
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value Symbol Parameter DPAK TO-220 VDS VGS ID ID IDM (2) PTOT dv/dt (3) VISO Tstg Tj Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Storage temperature Operating junction temperature -20 14 80 192 20 2500 -65 to 150 150 500 30 20 (1) 14(1) 80(1) 45 Unit TO-220FP V V A A A W V/ns V C C
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 20 A, di/dt 200 A/s, VDD = 80% V(BR)DSS
Table 3.
Symbol Rthj-case Rthj-amb Rthj-pcb Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Thermal resistance junction-pcb max Maximum lead temperature for soldering purposes 62.5 -TO-220 0.65 -30 300 DPAK TO-220FP 2.8 62.5 -Unit C/W C/W C/W C
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAS, VDD = 35 V) Max value 10 700 Unit A mJ
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Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS= 0 VDS = Max rating, VDS = Max rating,@125 C VGS = 30 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 10 A 3 4 0.22 Min. 500 1 10 100 5 0.25 Typ. Max. Unit V A A nA V
Table 6.
Symbol gfs(1) Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Test conditions VDS > ID(on) x RDS(on)max, ID= 10 A VDS = 25V, f =1 MHz, VGS = 0 Min. Typ. 9 1380 290 40 130 Max. Unit S pF pF pF pF
VGS = 0, VDS = 0 to 400 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 400 V, ID = 20 A VGS = 10 V (see Figure 16)
Rg
2.8
53 nC nC nC
Qg Qgs Qgd
1.
Total gate charge Gate-source charge Gate-drain charge
38 18 10
Pulsed: pulse duration = 300 s, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STB20NM50FD - STF20NM50FD - STP20NM50FD
Electrical characteristics
Table 7.
Symbol td(on) tr tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 250 V, ID = 10 A, RG = 4.7 , VGS = 10 V (see Figure 15) VDD = 400 V, ID = 20 A, RG = 4.7 , VGS = 10 V (see Figure 15) Min Typ 22 20 6 15 30 Max Unit ns ns ns ns ns
Table 8.
Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM
2.
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, VGS=0 ISD =20 A, di/dt =100 A/s, VDD = 60 V, TJ=150 C (see Figure 17) 245 2 16 Test conditions Min Typ Max 20 80 1.5 Unit A A V ns nC A
1. Pulse width limited by safe operating area Pulsed: pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 / DPAK Figure 3. Thermal impedance for TO-220 / DPAK
Figure 4.
Safe operating area for TO-220FP
Figure 5.
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Figure 7.
Transfer characteristics
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STB20NM50FD - STF20NM50FD - STP20NM50FD Figure 8. Transconductance Figure 9.
Electrical characteristics Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs temperature
Figure 13. Normalized on resistance vs temperature
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Electrical characteristics Figure 14. Source-drain diode forward characteristics
STB20NM50FD - STF20NM50FD - STP20NM50FD
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STB20NM50FD - STF20NM50FD - STP20NM50FD
Test circuit
3
Test circuit
Figure 16. Gate charge test circuit
Figure 15. Switching times test circuit for resistive load
Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
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Package mechanical data
STB20NM50FD - STF20NM50FD - STP20NM50FD
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Package mechanical data
STB20NM50FD - STF20NM50FD - STP20NM50FD
TO-220FP mechanical data
Dim. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.80 2.9 15.90 9 3 mm. Min. 4.40 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.40 10 16 30.6 10.60 3.6 16.40 9.30 3.2 1.126 0.385 0.114 0.626 0.354 0.118 Typ Max. 4.60 2.7 2.75 0.70 1.00 1.50 1.50 5.20 2.70 10.40 Min. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch Typ. Max. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7
Dia
F1
D
F
G1 H
F2
L2 L5
E
123
L4
7012510-I
12/16
G
STB20NM50FD - STF20NM50FD - STP20NM50FD
Package mechanical data
DPAK (TO-263) mechanical data
mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
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Packaging mechanical data
STB20NM50FD - STF20NM50FD - STP20NM50FD
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
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STB20NM50FD - STF20NM50FD - STP20NM50FD
Revision history
6
Revision history
Table 9.
Date 21-Jun-2004 21-Apr-2008
Document revision history
Revision 8 9 Figure 4: Safe operating area for TO-220FP and Figure 5: Thermal impedance for TO-220FP added. Changes
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STB20NM50FD - STF20NM50FD - STP20NM50FD
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